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| BPY 11 P Silizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 420 nm bis 1060 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht uberzogen q Gruppiert lieferbar Anwendungen q fur Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotbereich Typ Type BPY 11 P IV BPY 11 P V Bestellnummer Ordering Code Q60215-Y111-S4 Q60215-Y111-S5 Features q Especially suitable for applications from 420 nm to 1060 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Binned by spectral sensitivity Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near infrared range Semiconductor Group 183 10.95 fso06032 BPY 11 P Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value - 55 ... + 100 1 Einheit Unit C V Top; Tstg VR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 1 V; E = 0 Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Symbol Symbol Wert Value 60 ( 47) 850 420 ... 1060 Einheit Unit nA/Ix nm nm S S max A LxB LxW 7.6 1.95 x 4.45 mm2 mm 60 1 ( 10) 0.55 0.80 440 ( 260) 60 ( 47) Grad deg. A A/W Electrons Photon mV A IR S VO ISC Semiconductor Group 184 BPY 11 P Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 1 k; VR = 1 V; = 850 nm; Ip = 50 A Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazitat, VR = 1 V, f = 1 MHz, E = 0 Capacitance Fotoempfindlichkeitsgruppen Spectral sensitivity groups Typ Type BPY 11 P IV BPY 11 P V Symbol Symbol Wert Value 3 Einheit Unit s tr, tf TCV TCI C0 - 2.6 0.12 0.8 mV/K %/K nF ISC (Ev = 1000 Ix) 47 ... 63 A 56 A Semiconductor Group 185 BPY 11 P Relative spectral sensitivity Srel = f () Open-circuit voltage VO = f (Ev ) Short-circuit current ISC = f (Ev ) Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 1 V, E = 0 Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Semiconductor Group 186 |
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